The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 2026
Filed:
Jan. 10, 2024
Fujifilm Corporation, Tokyo, JP;
Fujifilm Electronic Materials U.s.a., Inc., North Kingstown, RI (US);
Atsushi Mizutani, Shizuoka, JP;
Mick Bjelopavlic, North Kingstown, RI (US);
Carl Ballesteros, North Kingstown, RI (US);
FUJIFILM Corporation, Tokyo, JP;
FUJIFILM Electronic Materials U.S.A., Inc., North Kingstown, RI (US);
Abstract
Provided is a semiconductor etching solution having a large etching ratio of SiGe relative to Si when an object containing Si and SiGe is treated and having excellent storage stability. The semiconductor etching solution includes: a fluoride ion source; a carboxylic acid; a percarboxylic acid; hydrogen peroxide; and bromide ions, and a content of the bromide ions is less than 500 mass ppm with respect to a total mass of the semiconductor etching solution.