The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 16, 2026

Filed:

Feb. 14, 2022
Applicant:

Aoi Electronics Co., Ltd., Takamatsu, JP;

Inventors:

Katsuhiro Takao, Kagawa, JP;

Atsushi Kuroha, Kagawa, JP;

Yoshiaki Aizawa, Kagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10W 70/65 (2026.01); H10W 72/00 (2026.01); H10W 74/10 (2026.01); H10W 90/00 (2026.01); H02M 3/00 (2006.01); H10W 72/20 (2026.01);
U.S. Cl.
CPC ...
H10W 70/65 (2026.01); H10W 72/071 (2026.01); H10W 74/111 (2026.01); H10W 90/00 (2026.01); H02M 3/003 (2021.05); H10W 72/01953 (2026.01); H10W 72/20 (2026.01); H10W 90/736 (2026.01); H10W 90/796 (2026.01);
Abstract

Performance of a semiconductor device is improved. A semiconductor deviceincludes a die padmade of a conductive material, a semiconductor chip CHI provided on an upper surface of the die pad, and a semiconductor chip CH. The semiconductor chip CHI has a gate pad electrode GPand a drain pad electrode DP, and the semiconductor chip CHhas a pad electrode AP. A conductive layeris provided on each upper surface of the gate pad electrode GPand the pad electrode APso as to be electrically connected to the gate pad electrode GPand the pad electrode AP. The die pad, the semiconductor chip CH, the semiconductor chip CH, and the conductive layerare sealed with a resin layersuch that an upper surface of the conductive layerand a lower surface of die padare exposed. A passive element memberincluding one or more passive elements is provided on upper surfaces of the two conductive layers


Find Patent Forward Citations

Takao, Katsuhiro. (2026). Semiconductor device and method of manufacturing the same (U.S. Patent No. 12660658). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12660658

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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