The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 16, 2026

Filed:

May. 27, 2022
Applicant:

Mitsubishi Electric Corporation, Tokyo, JP;

Inventor:

Hiroyuki Masumoto, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10W 70/40 (2026.01); H10D 84/80 (2025.01); H10W 90/00 (2026.01);
U.S. Cl.
CPC ...
H10W 70/457 (2026.01); H10D 84/811 (2025.01); H10W 70/435 (2026.01); H10W 70/481 (2026.01); H10W 70/458 (2026.01); H10W 70/461 (2026.01); H10W 70/465 (2026.01); H10W 90/756 (2026.01); H10W 90/811 (2026.01);
Abstract

A semiconductor device includes an insulating layer having a first surface and a second surface opposite to the first surface. The semiconductor device includes at least one semiconductor element located on a side of the first surface. The semiconductor device includes a first metal sinter and a second metal sinter. The first metal sinter is in contact with the first surface of the insulating layer and the semiconductor element, and bonds the insulating layer and the semiconductor element. The second metal sinter is in contact with the second surface of the insulating layer.


Find Patent Forward Citations

Masumoto, Hiroyuki. (2026). Semiconductor device (U.S. Patent No. 12660642). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12660642

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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