The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 16, 2026

Filed:

May. 10, 2023
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Jeonil Lee, Suwon-si, KR;

Seryeun Yang, Suwon-si, KR;

Hyeran Lee, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10W 20/41 (2026.01); H10B 51/10 (2023.01); H10B 51/30 (2023.01); H10B 51/40 (2023.01); H10D 30/63 (2025.01); H10D 30/69 (2025.01); H10D 62/40 (2025.01); H10D 64/23 (2025.01); H10D 64/66 (2025.01);
U.S. Cl.
CPC ...
H10W 20/435 (2026.01); H10B 51/10 (2023.02); H10B 51/30 (2023.02); H10B 51/40 (2023.02); H10D 30/63 (2025.01); H10D 30/701 (2025.01); H10D 62/40 (2025.01); H10D 64/252 (2025.01); H10D 64/258 (2025.01); H10D 64/665 (2025.01);
Abstract

A semiconductor device is provided. The semiconductor device includes: first lower conductive lines extending in a first direction and disposed at a first height level; first upper conductive lines extending in the first direction and vertically overlapping the first lower conductive lines at a second height level, higher than the first height level; single crystal semiconductor patterns disposed between the first lower conductive lines and the first upper conductive lines at a third height level; intermediate conductive lines extending in a second direction intersecting the first direction and passing between the single crystal semiconductor patterns, between the first height level and the second height level; and data storage layers including portions between the intermediate conductive lines and the single crystal semiconductor patterns.


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