The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2026
Filed:
Sep. 15, 2023
Applicant:
Db Hitek Co., Ltd., Bucheon-si, KR;
Inventors:
Sang Il Hwang, Wonju-si, KR;
Jong Ho Lee, Eumseong-gun, KR;
Assignee:
DB HiTek Co., Ltd., Bucheon-si, KR;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10W 10/17 (2026.01); H10D 30/60 (2025.01); H10D 30/65 (2025.01); H10D 62/10 (2025.01); H10W 10/00 (2026.01); H10W 10/20 (2026.01);
U.S. Cl.
CPC ...
H10W 10/17 (2026.01); H10D 30/603 (2025.01); H10D 30/65 (2025.01); H10D 62/115 (2025.01); H10W 10/0145 (2026.01); H10W 10/021 (2026.01); H10W 10/20 (2026.01);
Abstract
Proposed is a high voltage semiconductor device and a method of manufacturing the same and, more particularly, a high voltage semiconductor device and a method of manufacturing the same for positioning the upper end of an air gap formed in a DTI region at a relatively deep position in the DTI region by forming the bottom of the upper region of the DTI region at a deeper position in a substrate compared to the bottom of a STI region.