The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 16, 2026

Filed:

Dec. 17, 2021
Applicant:

Hitachi High-tech Corporation, Tokyo, JP;

Inventor:

Kiyohiko Satoh, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H10P 14/60 (2026.01); H10P 14/692 (2026.01);
U.S. Cl.
CPC ...
H10P 14/6336 (2026.01); H10P 14/6308 (2026.01); H10P 14/6316 (2026.01); H10P 14/6319 (2026.01); H10P 14/6339 (2026.01); H10P 14/69215 (2026.01);
Abstract

To enable formation of a film that protects a sidewall of a pattern and is good in film quality, low in etching rate, and good in coverage of the sidewall, a film formation method includes a first step of supplying a gas into a vacuum processing chamber while generating plasma, and forming a film with the generated plasma on a surface of a substrate to be processed, a second step of removing halogen with plasma after the first step, and a third step of oxidizing or nitriding the film with plasma after the second step.


Find Patent Forward Citations

Satoh, Kiyohiko. (2026). Film formation method and plasma processing method (U.S. Patent No. 12660527). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12660527

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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