The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2026
Filed:
Mar. 15, 2022
Applicant:
Kioxia Corporation, Tokyo, JP;
Inventors:
Assignee:
Kioxia Corporation, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H10P 14/60 (2026.01); H10D 84/01 (2026.01); H10D 84/03 (2025.01); H10D 84/83 (2025.01); H10P 14/692 (2026.01);
U.S. Cl.
CPC ...
H10P 14/6309 (2026.01); H10D 84/0144 (2025.01); H10D 84/038 (2025.01); H10D 84/83 (2025.01); H10P 14/69215 (2026.01); H10P 14/6927 (2026.01); H10P 14/6939 (2026.01); H10P 14/69391 (2026.01); H10P 14/69392 (2026.01); H10P 14/69394 (2026.01); H10P 14/69395 (2026.01); H10P 14/69396 (2026.01);
Abstract
A method for manufacturing a semiconductor device of an embodiment includes: forming a first film on a semiconductor layer containing silicon (Si), the first film containing a metal element and oxygen (O) and having a first thickness; and forming a second film between the semiconductor layer and the first film using radical oxidation, the second film containing silicon (Si) and oxygen (O) and having a second thickness larger than the first thickness.
Saito, Yuta. (2026). Method for manufacturing semiconductor device (U.S. Patent No. 12660523). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12660523
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile