The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2026
Filed:
Aug. 29, 2024
Samsung Electronics Co., Ltd., Suwon-si, KR;
Jinwoo Lee, Suwon-si, KR;
Hyunsang Hwang, Suwon-si, KR;
Youngdong Kim, Suwon-si, KR;
Dongho Ahn, Suwon-si, KR;
Jin Myung Choi, Suwon-si, KR;
Geon Hui Han, Suwon-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
POSTECH Research and Business Development Foundation, Suwon-si, KR;
Abstract
A memory device comprising a stacking structure including a plurality of electrodes and an insulation layer between the plurality of electrodes. The stacking structure has a recess portion corresponding to the plurality of electrodes or the insulation layer at a side surface of the stacking structure. The memory device also comprising a resistance variable layer on the side surface of the stacking structure having the recess portion, and includes a portion extending in an extension direction crossing the stacking structure. The resistance variable layer includes a first portion including a first expanded portion along a recess surface of the recess portion, a second portion including a second expanded portion along the recess surface of the recess portion on the first portion, and a third portion on the second portion. The second portion has a resistance smaller than a resistance of the first portion.