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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12660507 B1

PDFFull Text
Date of Patent:
Jun. 16, 2026

Filed:

Nov. 19, 2021

Inverted wide base double magnetic tunnel junction device

Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Pouya Hashemi, Purchase, NY (US);

Daniel Charles Edelstein, White Plains, NY (US);

Andrew Giannetta, Somers, NY (US);

Assignee:

International Business Machines Corporation, Armonk, NY (US);

Attorneys:

Scully, Scott, Murphy & Presser, P.C.

Yuanmin Cai

Primary Examiner:

Jami Valentine Miller

Int. Cl.
CPC ...
H10N 50/01 (2023.01); H10B 61/00 (2023.01); H10N 50/80 (2023.01);
U.S. Cl.
CPC ...
H10N 50/01 (2023.02); H10B 61/00 (2023.02); H10N 50/80 (2023.02);
Abstract

A method of manufacturing a double magnetic tunnel junction device includes forming a first magnetic tunnel junction stack, forming a spin conducting layer on the first magnetic tunnel junction stack, forming a metallic ring layer on the sides of the spin conducting layer; and forming a second magnetic tunnel junction stack on the spin conducting layer. The second magnetic tunnel junction stack has a width that is greater than the width of the first magnetic tunnel junction stack. A double magnetic tunnel junction device includes a first magnetic tunnel junction stack, a spin conducting layer on the first magnetic tunnel junction stack, a metallic ring layer on the sides of the spin conducting layer; and a second magnetic tunnel junction stack on the spin conducting layer. The second magnetic tunnel junction stack has a width that is greater than the width of the first magnetic tunnel junction stack.

Find Patent Forward Citations

Hashemi, Pouya. (2026). Inverted wide base double magnetic tunnel junction device (U.S. Patent No. 12660507). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12660507

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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