The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 16, 2026

Filed:

Nov. 07, 2022
Applicant:

Nikkiso Co., Ltd., Tokyo, JP;

Inventors:

Noritaka Niwa, Hakusan, JP;

Tetsuhiko Inazu, Hakusan, JP;

Assignee:

NIKKISO CO., LTD., Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10H 20/01 (2025.01); H10H 20/84 (2025.01); H10H 20/854 (2025.01); H10H 20/825 (2025.01);
U.S. Cl.
CPC ...
H10H 20/854 (2025.01); H10H 20/01335 (2025.01); H10H 20/84 (2025.01); H10H 20/034 (2025.01); H10H 20/0362 (2025.01); H10H 20/825 (2025.01);
Abstract

A semiconductor light-emitting element has an n-type semiconductor layer arranged on a base layer, and is made of an n-type AlGaN-based semiconductor material; an active layer arranged on the n-type semiconductor layer, and is made of an AlGaN-based semiconductor material; a p-type semiconductor layer arranged on the active layer; a p-side contact electrode that contacts the top face of the p-type semiconductor layer; a dielectric protective layer that covers the p-side contact electrode, contacts the top face of the p-type semiconductor layer, and is made of SiO; and a dielectric cover layer that contacts the individual side faces of the active layer and the p-type semiconductor layer, contacts the top face of the p-type semiconductor layer, covers the dielectric protective layer, and is made of AlO.


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