The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2026
Filed:
Jan. 06, 2023
Samsung Display Co., Ltd., Yongin-si, KR;
Mi Hyang Sheen, Yongin-si, KR;
Yun Hyuk Ko, Yongin-si, KR;
Dong UK Kim, Yongin-si, KR;
Na Ri Ahn, Yongin-si, KR;
Chang Hee Lee, Yongin-si, KR;
Do Hyung Kim, Yongin-si, KR;
Ran Kim, Yongin-si, KR;
In Pyo Kim, Yongin-si, KR;
Ki Young Yeon, Yongin-si, KR;
Je Won Yoo, Yongin-si, KR;
Joo Hee Lee, Yongin-si, KR;
Sang Ho Jeon, Yongin-si, KR;
Jung Woon Jung, Yongin-si, KR;
Chan Woo Joo, Yongin-si, KR;
Jin Young Choi, Yongin-si, KR;
Na Mi Hong, Yongin-si, KR;
Jong Il Kim, Yongin-si, KR;
Jin Ho Byun, Yongin-si, KR;
Sang Ho Oh, Yongin-si, KR;
Jae Kwang Lee, Yongin-si, KR;
Yong Seok Choi, Yongin-si, KR;
Jong Hoon Ha, Yongin-si, KR;
Samsung Display Co., Ltd., Yongin-si, KR;
Abstract
A method for fabricating a light emitting element includes preparing a substrate, and forming a first semiconductor material layer, a light emitting material layer, a second semiconductor material layer and an electrode material layer on the substrate, forming semiconductor rods spaced apart from each other by etching the first semiconductor material layer, the light emitting material layer, the second semiconductor material layer and the electrode material layer in a direction perpendicular to an upper surface of the substrate, forming an insulating layer surrounding sides of the semiconductor rods through a sol-gel process by immersing the substrate, including the semiconductor rods, in a solution containing a precursor material, and forming light emitting elements by separating the semiconductor rods, including the insulating layer, from the substrate, and the light emitting elements have an external quantum efficiency of 20.2±0.6%.