The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 16, 2026

Filed:

Sep. 27, 2023
Applicant:

Quanzhou San'an Semiconductor Technology Co., Ltd., Nanan City, CN;

Inventors:

Liming Zhang, Xiamen, CN;

Renlong Yang, Xiamen, CN;

Heying Tang, Xiamen, CN;

Quanyang MA, Xiamen, CN;

Xingrong Chen, Nanan City, CN;

Chung-Ying Chang, Xiamen, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10H 20/819 (2025.01); H10H 20/831 (2025.01);
U.S. Cl.
CPC ...
H10H 20/819 (2025.01); H10H 20/831 (2025.01);
Abstract

A light-emitting diode (LED) includes a semiconductor structure, a transparent conducting layer, a first electrode, and a second electrode. The semiconductor structure has a lower surface and an upper surface, and includes a first semiconductor layer, an active layer, and a second semiconductor layer that are sequentially stacked in a laminating direction from the lower surface to the upper surface. The transparent conducting layer is located on the second semiconductor layer. The first electrode is located on the first semiconductor layer. The second electrode is located on the transparent conducting layer. When viewing the semiconductor structure and the transparent conducting layer from above the LED. The semiconductor structure has a shortest side with a length of X μm. The transparent conducting layer has at least one bevel corner portion that has a radius of curvature Rranging from 15 to X/2 μm.


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