The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2026
Filed:
Nov. 29, 2023
Applicant:
Commissariat À L'énergie Atomique ET Aux Énergies Alternatives, Paris, FR;
Inventors:
Ludovic Dupre, Grenoble, FR;
Amélie Dussaigne, Grenoble, FR;
Carole Pernel, Grenoble, FR;
Fabian Rol, Grenoble, FR;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10F 71/00 (2025.01); H10F 77/124 (2025.01); H10H 20/01 (2025.01); H10H 20/813 (2025.01); H10H 20/815 (2025.01); H10H 20/82 (2025.01); H10H 29/14 (2025.01);
U.S. Cl.
CPC ...
H10F 71/137 (2025.01); H10F 71/1274 (2025.01); H10F 77/12485 (2025.01); H10H 20/01 (2025.01); H10H 20/0137 (2025.01); H10H 20/018 (2025.01); H10H 20/813 (2025.01); H10H 20/815 (2025.01); H10H 20/82 (2025.01); H10H 29/142 (2025.01);
Abstract
A method for manufacturing a growth substrate, including producing mesas based on GaN having various porosification levels, implementing differentiated steps of electrochemical porosification, non-photoassisted and photoassisted, of various portions of the mesas.