The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2026
Filed:
Jan. 12, 2021
Hamamatsu Photonics K.k., Hamamatsu, JP;
Jun Hiramitsu, Hamamatsu, JP;
Mitsuhito Mase, Hamamatsu, JP;
Akihiro Shimada, Hamamatsu, JP;
Hiroaki Ishii, Hamamatsu, JP;
Toshinori Ito, Hamamatsu, JP;
Yuma Tanaka, Hamamatsu, JP;
HAMAMATSU PHOTONICS K.K., Hamamatsu, JP;
Abstract
An optical sensor includes an avalanche multiplication region including a first multiplication region having a first conductive type and a second multiplication region having a second conductive type, each of the first multiplication region and the second multiplication region being formed in a layer shape, a charge collection region having the second conductive type disposed on a first side of the second multiplication region, and a first conductive region having the first conductive type disposed on the first side of the second multiplication region. The second multiplication region has a first portion overlapping the charge collection region in a thickness direction of the first multiplication region and the second multiplication region and a second portion overlapping the first conductive region in the thickness direction. A concentration of impurities in the first portion is higher than a concentration of impurities in the second portion.