The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 16, 2026

Filed:

Aug. 05, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Kook Tae Kim, Hwaseong-si, KR;

Jingyun Kim, Seogwipo-si, KR;

Jonghyeon Noh, Hwaseong-si, KR;

Miseon Park, Hwaseong-si, KR;

Jaewoong Lee, Yongin-si, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10F 39/12 (2025.01); H10F 39/00 (2025.01);
U.S. Cl.
CPC ...
H10F 39/807 (2025.01); H10F 39/011 (2025.01); H10F 39/199 (2025.01); H10F 39/811 (2025.01); H10F 39/8053 (2025.01); H10F 39/8063 (2025.01);
Abstract

An image sensor includes: a substrate including a plurality of pixel regions, a first surface and a second surface opposite to the first surface; and a deep device isolation pattern disposed between adjacent pixel regions of the plurality of pixel regions and penetrating the substrate, wherein the deep deice isolation pattern includes: a semiconductor pattern extended from the second surface toward the first surface; and sidewall insulating patterns interposed between the semiconductor pattern and the substrate, wherein the semiconductor pattern includes sidewall portions and a filling portion, wherein the sidewall portions are provided adjacent to the sidewall insulating patterns, respectively, wherein the filling portion is provided between the sidewall portions, and wherein top surfaces of the sidewall portions are located at a height higher than a top surface of the filling portion,


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