The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 16, 2026

Filed:

Mar. 03, 2023
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Haewook Jeong, Suwon-si, KR;

Wonseok Lee, Suwon-si, KR;

Minchul Lee, Suwon-si, KR;

Masamichi Ito, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H10F 39/00 (2025.01); H10F 39/12 (2025.01); H10F 39/18 (2025.01);
U.S. Cl.
CPC ...
H10F 39/18 (2025.01); H10F 39/199 (2025.01); H10F 39/80373 (2025.01);
Abstract

An image sensor is provided. The image sensor includes: a semiconductor substrate including a first surface and a second surface, which are opposite to each other; a photoelectric conversion region in the semiconductor substrate; a vertical transfer gate, which extends into the semiconductor substrate from the first surface toward the photoelectric conversion region; a floating diffusion region, which is provided in the semiconductor substrate, is spaced apart from the vertical transfer gate, and is an n-type impurity region; and a second impurity region, which is provided between the vertical transfer gate and the floating diffusion region and is a p-type impurity region.


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