The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2026
Filed:
Jun. 27, 2023
Shanghai Huali Microelectronics Corporation, Shanghai, CN;
Chenchen Qiu, Shanghai, CN;
Jun Qian, Shanghai, CN;
Chang Sun, Shanghai, CN;
Zhengying Wei, Shanghai, CN;
Shaghai Huali Microelectronics Corporation, Shanghai, CN;
Abstract
The present application discloses a CMOS image sensor. A pixel cell circuit comprises a photodiode and a CMOS pixel readout circuit. The pixel cell circuit is formed on an SOI substrate, and the photodiode is formed on a bottom semiconductor substrate. The CMOS pixel readout circuit is formed on a top semiconductor substrate. A photo-induced carrier of the photodiode is connected to the CMOS pixel readout circuit by means of an electrotransfer structure passing through a dielectric buried layer. The present application also discloses a method for manufacturing a CMOS image sensor. The present application can increase a pixel cell density without reducing a photodiode area, thus achieving an ultra-high CMOS image sensor density and improving the device quality.