The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2026
Filed:
Dec. 28, 2020
Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;
Shunpei Yamazaki, Setagaya, JP;
Shinya Sasagawa, Chigasaki, JP;
Ryota Hodo, Atsugi, JP;
Tomoaki Moriwaka, Isehara, JP;
Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;
Abstract
A semiconductor device with a small variation in characteristics is provided. The semiconductor device includes a first insulator; a second insulator having an opening over the first insulator; a third insulator that has a first depressed portion and is provided inside the opening; a first oxide that has a second depressed portion and is provided inside the first depressed portion; a second oxide provided inside the second depressed portion; a first conductor and a second conductor that are electrically connected to the second oxide and are apart from each other; a fourth insulator over the second oxide; and a third conductor including a region overlapping with the second oxide with the fourth insulator therebetween. The second oxide includes a first region, a second region, and a third region sandwiched between the first region and the second region in a top view. The first conductor includes a region overlapping with the first region and the second insulator. The second conductor includes a region overlapping with the second region and the second insulator. The third conductor includes a region overlapping with the third region.