The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 16, 2026

Filed:

Nov. 22, 2022
Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Benno Koeppl, Markt Indersdorf, DE;

Andre Mourrier, Manosque, FR;

Sebastian Thunich, Munich, DE;

David Jacquinod, La Fare les oliviers, FR;

Stefan Schumi, Taufkirchen, DE;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 84/80 (2025.01); H03K 17/687 (2006.01); H10W 72/50 (2026.01); H10W 74/10 (2026.01); H10W 74/47 (2026.01);
U.S. Cl.
CPC ...
H10D 84/813 (2025.01); H10W 72/50 (2026.01); H10W 74/111 (2026.01); H10W 74/47 (2026.01); H03K 17/6871 (2013.01);
Abstract

A power module package may comprise a first metal oxide semiconductor field effect transistor (MOSFET), wherein the first MOSFET is configured to operate in a linear mode of operation when the first MOSFET is ON; a second MOSFET, wherein the second MOSFET is configured to operate in a non-linear mode of operation when the second MOSFET is ON, and wherein the first MOSFET and the second MOSFET are arranged in parallel; and a third MOSFET, wherein the third MOSFET is arranged to perform one or more sensing operations. The first MOSFET, the second MOSFET, and the third MOSFET may be arranged within a molding compound of the power module package.


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