The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 16, 2026

Filed:

Feb. 26, 2024
Applicants:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;

Inventors:

Taichi Fukuda, Yokohama, JP;

Yusuke Kobayashi, Yokohama, JP;

Shotaro Baba, Kawasaki, JP;

Hiro Gangi, Tokyo, JP;

Hiroki Nemoto, Nonoichi, JP;

Tomoaki Inokuchi, Yokohama, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 64/00 (2025.01); H10D 30/66 (2025.01);
U.S. Cl.
CPC ...
H10D 64/118 (2025.01); H10D 30/668 (2025.01); H10D 64/117 (2025.01);
Abstract

An insulating member includes a fixed charge. The insulating member includes a first insulating part. The first insulating part includes a first region, a second region, and a third region. The first region is positioned between a gate electrode and the second region in a first direction. The second region is positioned between the first region and the third region in the first direction. The third region is positioned between the second region and a second surface in the first direction. A density of the fixed charge is greater in the first region than in the second region.


Find Patent Forward Citations

Fukuda, Taichi. (2026). Semiconductor device (U.S. Patent No. 12660279). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12660279

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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