The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2026
Filed:
Sep. 12, 2022
Applicant:
Proterial, Ltd., Tokyo, JP;
Inventors:
Assignee:
PROTERIAL, LTD., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 62/17 (2025.01); H10D 12/01 (2025.01); H10D 30/66 (2025.01); H10D 62/832 (2025.01); H10P 14/20 (2026.01);
U.S. Cl.
CPC ...
H10D 62/393 (2025.01); H10D 12/031 (2025.01); H10D 30/66 (2025.01); H10D 62/8325 (2025.01); H10P 14/3408 (2026.01); H10P 14/3441 (2026.01);
Abstract
In a silicon carbide substrate including: a SiC substrate; and a first semiconductor layer, a second semiconductor layer and a drift layer that are epitaxial layers sequentially formed on the SiC substrate, an impurity concentration of the first semiconductor layer is lower than impurity concentrations of the SiC substrate and the second semiconductor layer, and the second semiconductor layer is formed to have a high impurity concentration or a large thickness.
Konishi, Kumiko. (2026). Silicon carbide substrate including multiple semiconductor layers having a high break down voltage (U.S. Patent No. 12660268). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12660268
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile