The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2026
Filed:
Nov. 09, 2021
Applicant:
Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;
Inventors:
Assignee:
SEMICONDUCTOR ENERGY LABORATORY CO., LTD., Kanagawa-ken, JP;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/69 (2025.01); G11C 11/22 (2006.01); H10D 30/67 (2025.01);
U.S. Cl.
CPC ...
H10D 30/701 (2025.01); H10D 30/6734 (2025.01); H10D 30/6739 (2025.01); H10D 30/6755 (2025.01); G11C 11/223 (2013.01); G11C 11/2275 (2013.01);
Abstract
A transistor having a large S value or a semiconductor device performing calculation utilizing a transistor operation in a subthreshold region is provided. The transistor includes an oxide semiconductor layer including a channel formation region, a gate electrode including a region overlapping with the oxide semiconductor layer with an insulating layer therebetween, and a first conductive layer including a region overlapping with the oxide semiconductor layer with a ferroelectric layer therebetween. In particular, the ferroelectric layer includes a crystal having a crystal structure exhibiting ferroelectricity.