The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2026
Filed:
Aug. 11, 2021
Innoscience (Suzhou) Technology Co., Ltd., Suzhou City, CN;
Qiyue Zhao, Suzhou City, CN;
Yu Shi, Suzhou City, CN;
INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD., Suzhou City, CN;
Abstract
The semiconductor device includes a first nitride-based semiconductor layer, a second nitride-based semiconductor layer, a first source/drain (S/D) electrode, a second S/D electrode, a first gate electrode, a second gate electrode, a first passivation layer, a conductive layer, and a second passivation layer. The second nitride-based semiconductor layer is disposed on the first nitride-based semiconductor layer. The first and second S/D electrodes and the first and second gate electrodes are disposed above the second nitride-based semiconductor layer. The first passivation layer covers the first and second gate electrodes. The conductive layer is disposed over the first passivation layer and includes an electrode portion and a field plate portion. The second passivation layer is disposed on the conductive layer and penetrates the conductive layer to make contact with the first passivation layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile