The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2026
Filed:
Aug. 08, 2022
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Byunghoon Na, Suwon-si, KR;
Jooho Lee, Hwaseong-si, KR;
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 1/68 (2025.01); H01G 4/008 (2006.01); H01G 4/12 (2006.01); H01G 4/33 (2006.01); H10B 12/00 (2023.01); H10B 63/00 (2023.01); H10N 70/00 (2023.01);
U.S. Cl.
CPC ...
H10D 1/696 (2025.01); H01G 4/008 (2013.01); H01G 4/33 (2013.01); H10B 12/315 (2023.02); H10B 12/318 (2023.02); H10B 63/30 (2023.02); H10D 1/682 (2025.01); H10D 1/694 (2025.01); H10N 70/8416 (2023.02); H01G 4/1209 (2013.01); H01G 4/1227 (2013.01); H01G 4/1236 (2013.01); H01G 4/1254 (2013.01); H10B 12/34 (2023.02); H10N 70/8836 (2023.02);
Abstract
Provided are a capacitor and a semiconductor device including the same. The capacitor includes: a dielectric layer having a perovskite crystal structure; and first and second electrodes spaced apart from each other with the dielectric layer therebetween. At least one of the first and second electrodes includes a metallic layer having a perovskite crystal structure, a first ionic layer having ionic properties, and a semiconductor layer.