The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2026
Filed:
Sep. 06, 2023
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01); H10D 1/00 (2025.01); H10D 1/68 (2025.01);
U.S. Cl.
CPC ...
H10D 1/042 (2025.01); H10B 12/0335 (2023.02); H10B 12/315 (2023.02); H10D 1/696 (2025.01); H10D 1/716 (2025.01);
Abstract
A capacitor structure includes a lower electrode structure disposed on a substrate, including an oxide of a first metal having 4 valence electrons, and being doped with a second metal having 3, 5, 6, or 7 valence electrons, a dielectric pattern disposed on a sidewall of the lower electrode structure, and an upper electrode disposed on a sidewall of the dielectric pattern.
Park, Jungmin. (2026). Capacitor structure, method of forming the same, and semiconductor device including the capacitor structure (U.S. Patent No. 12660212). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12660212
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile