The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 16, 2026

Filed:

Jun. 24, 2024
Applicant:

United Semiconductor (Xiamen) Co., Ltd., Xiamen, CN;

Inventors:

Weikun Lin, Shamen City, CN;

Wen Yi Tan, Xiamen, CN;

Bin Yao, Xiamen, CN;

Dejin Kong, Xiamen, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); H10B 63/00 (2023.01); H10B 80/00 (2023.01);
U.S. Cl.
CPC ...
H10B 63/30 (2023.02); H10B 63/84 (2023.02); H10B 80/00 (2023.02);
Abstract

A one transistor-two RRAM structure includes a substrate. A transistor is disposed on the substrate. The transistor includes a first source/drain doped region embedded in the substrate at one side of the transistor. A first source/drain plug, a first metal line, a first plug, a second metal line, a second lower plug, a second RRAM and a second upper metal line are stacked from bottom to top in listed sequence. The first source/drain plug contacts the first source/drain doped region. A first lower plug, a first RRAM and a first upper metal line are stacked from bottom to top in listed sequence. The first lower plug contacts the first metal line.


Find Patent Forward Citations

Loading…