The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2026
Filed:
Sep. 28, 2023
Psemi Corporation, San Diego, CA (US);
Parvez Daruwalla, San Diego, CA (US);
PSEMI CORPORATION, San Diego, CA (US);
Abstract
Methods and devices to control radiated spurious emission (RSE) in an RF antenna switch are presented. The RF antenna switch includes a through stack that includes at least one regular N-type FET transistor and a plurality of intrinsic N-type FET transistors, and a shunt stack that includes a plurality of intrinsic N-type FET transistors. During an inactive mode of operation, the regular transistor turns OFF to present a high impedance. The RF antenna switch includes a termination stack having a plurality of regular P-type FET transistors that are activated during the inactive mode to present a termination impedance to the antenna. A bias signal generator that remains partially active during the inactive mode of operation to generate positive and negative control voltages having magnitudes that are sufficiently high to maintain ON/OFF control of the transistors of the stacks.