The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 16, 2026

Filed:

Jan. 07, 2022
Applicant:

Sony Semiconductor Solutions Corporation, Kanagawa, JP;

Inventor:

Takahiro Arakida, Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/30 (2006.01); H01S 5/183 (2006.01); H01S 5/32 (2006.01);
U.S. Cl.
CPC ...
H01S 5/3095 (2013.01); H01S 5/18361 (2013.01); H01S 5/3215 (2013.01);
Abstract

The present technology provides a surface emitting laser capable of reducing a voltage drop at a tunnel junction. The present technology provides a surface emitting laser including: first and second multilayer film reflectors () laminated together; a plurality of active layers laminated together between the first and second multilayer film reflectors (); and a tunnel junction () disposed between first and second active layers () adjacent to each other in a lamination direction among the plurality of active layers, in which the tunnel junction () includes an n-type semiconductor layer () and a p-type semiconductor layer () laminated together, and the p-type semiconductor layer () includes first and second p-type semiconductor regions () laminated together.


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