The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2026
Filed:
Jul. 14, 2023
SK Hynix Nand Product Solutions Corp., Rancho Cordova, CA (US);
SK Hynix Inc., Icheon-si, KR;
Ming Zhang, San Jose, CA (US);
Yogesh Wakchaure, Folsom, CA (US);
Xiaolei Wang, Shanghai, CN;
Lei Chen, San Jose, CA (US);
Gulzar Kathawala, Fremont, CA (US);
Heejoung Park, Seoul, KR;
Wanik Cho, Seoul, KR;
SK Hynix NAND Product Solutions Corp., Rancho Cordova, CA (US);
SK hynix Inc., Icheon-si, KR;
Abstract
A method comprises applying a first reference drive voltage to a wordline of memory cells to generate a respective first resulting voltage level from each respective cell in the wordline, and storing in memory a first respective logic value indicated by the respective first resulting voltage level for each memory cell. The method further comprises applying a second reference drive voltage to the wordline of memory cells to generate a respective second resulting voltage level from each respective cell in the wordline while detecting a pattern of logic values stored in the memory in parallel. The memory is modified based on a second respective logic value indicated by the respective second resulting voltage level, and at least one of the first reference drive voltage and the second reference drive voltage is modified based on the detected pattern data.