The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2026
Filed:
Jul. 07, 2023
Applicant:
SK Hynix Inc., Icheon-si, KR;
Inventor:
Nam Jae Lee, Icheon-si, KR;
Assignee:
SK hynix Inc., Icheon-si, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 5/06 (2006.01); H10B 43/10 (2023.01); H10B 43/27 (2023.01); H10B 43/30 (2023.01); H10B 43/40 (2023.01);
U.S. Cl.
CPC ...
G11C 5/063 (2013.01); H10B 43/10 (2023.02); H10B 43/27 (2023.02); H10B 43/30 (2023.02); H10B 43/40 (2023.02);
Abstract
A semiconductor device including a first block word line, and a first channel layer located in the first block word line. the semiconductor device including a source pad connected to the first channel layer and located on the first block word line, and a first drain pad connected to the first channel layer and located on the first block word line. The semiconductor device including a global word line connected to the source pad, and a first local word line connected to the first drain pad.
Lee, Nam. (2026). Semiconductor device with source and drain pads located on the same side of a block word line and connected to a u-shaped channel layer located therein (U.S. Patent No. 12658218). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12658218
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile