The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 16, 2026

Filed:

Apr. 25, 2024
Applicant:

Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;

Inventor:

Atsushi Umezaki, Isehara, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G09G 3/34 (2006.01); G02F 1/133 (2006.01); G02F 1/1345 (2006.01); G02F 1/1362 (2006.01); G02F 1/1368 (2006.01); G09G 3/36 (2006.01); G11C 19/28 (2006.01); H10D 30/67 (2025.01); H10D 62/40 (2025.01); H10D 62/80 (2025.01); H10D 84/00 (2025.01); H10D 86/40 (2025.01); H10D 86/60 (2025.01); H10H 29/10 (2025.01); H10H 29/14 (2025.01); G02F 1/1335 (2006.01); G02F 1/1337 (2006.01); G02F 1/139 (2006.01); H10K 59/121 (2023.01); H10K 59/123 (2023.01); H10K 59/124 (2023.01); H10K 59/131 (2023.01); H10K 59/35 (2023.01); H10K 59/80 (2023.01); H10K 71/40 (2023.01); H10K 102/00 (2023.01); H10P 72/00 (2026.01);
U.S. Cl.
CPC ...
G09G 3/342 (2013.01); G02F 1/13306 (2013.01); G02F 1/13452 (2013.01); G02F 1/136213 (2013.01); G02F 1/136286 (2013.01); G02F 1/1368 (2013.01); G09G 3/3674 (2013.01); G09G 3/3677 (2013.01); G09G 3/3685 (2013.01); G11C 19/28 (2013.01); H10D 30/6756 (2025.01); H10D 62/402 (2025.01); H10D 62/80 (2025.01); H10D 84/00 (2025.01); H10D 86/421 (2025.01); H10D 86/423 (2025.01); H10D 86/441 (2025.01); H10D 86/481 (2025.01); H10D 86/60 (2025.01); H10H 29/10 (2025.01); H10H 29/142 (2025.01); G02F 1/133622 (2021.01); G02F 1/133753 (2013.01); G02F 1/1393 (2013.01); G02F 2202/103 (2013.01); G09G 3/3655 (2013.01); G09G 2300/0426 (2013.01); G09G 2300/0452 (2013.01); G09G 2310/024 (2013.01); G09G 2310/0286 (2013.01); G09G 2310/08 (2013.01); G09G 2320/0252 (2013.01); G09G 2330/021 (2013.01); H10K 59/1213 (2023.02); H10K 59/1216 (2023.02); H10K 59/123 (2023.02); H10K 59/124 (2023.02); H10K 59/131 (2023.02); H10K 59/35 (2023.02); H10K 59/351 (2023.02); H10K 59/352 (2023.02); H10K 59/8722 (2023.02); H10K 71/421 (2023.02); H10K 2102/3023 (2023.02); H10K 2102/3026 (2023.02); H10K 2102/3031 (2023.02); H10P 72/0454 (2026.01);
Abstract

A first transistor, a second transistor, a third transistor, a fourth transistor are provided. In the first transistor, a first terminal is electrically connected to a first wiring; a second terminal is electrically connected to a gate terminal of the second transistor; a gate terminal is electrically connected to a fifth wiring. In the second transistor, a first terminal is electrically connected to a third wiring; a second terminal is electrically connected to a sixth wiring. In the third transistor, a first terminal is electrically connected to a second wiring; a second terminal is electrically connected to the gate terminal of the second transistor; a gate terminal is electrically connected to a fourth wiring. In the fourth transistor, a first terminal is electrically connected to the second wiring; a second terminal is electrically connected to the sixth wiring; a gate terminal is connected to the fourth wiring.


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