The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 16, 2026

Filed:

Jan. 15, 2025
Applicants:

Chengdu Boe Optoelectronics Technology Co., Ltd., Chengdu, CN;

Boe Technology Group Co., Ltd., Beijing, CN;

Inventors:

Shuai Xie, Beijing, CN;

Xuewei Tian, Beijing, CN;

Ling Shi, Beijing, CN;

Yipeng Chen, Beijing, CN;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G09G 3/3208 (2016.01);
U.S. Cl.
CPC ...
G09G 3/3208 (2013.01); G09G 2300/0426 (2013.01); G09G 2300/0819 (2013.01); G09G 2300/0842 (2013.01); G09G 2310/0262 (2013.01); G09G 2310/08 (2013.01); G09G 2320/0233 (2013.01); G09G 2320/0247 (2013.01);
Abstract

A pixel circuit includes a first transistor, a third transistor, and a storage capacitor, the pixel circuit further including a base substrate and a first semiconductor layer and a first conductive layer stacked on the base substrate. The first semiconductor layer includes a first active layer of the first transistor and a third active layer of the third transistor. The first conductive layer includes a first electrode plate and a first gate block of the storage capacitor, an overlapping area of the first gate block and the first active layer of the first transistor serves as a gate electrode of the first transistor, the first electrode plate serves as a gate electrode of the third transistor, and an overlapping area of the third active layer of the third transistor and the first electrode plate serves as a channel region of the third transistor.


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