The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 16, 2026

Filed:

Nov. 28, 2023
Applicant:

Rohm Co., Ltd., Kyoto, JP;

Inventor:

Hiroshi Yoshikawa, Kyoto, JP;

Assignee:

Rohm Co., Ltd., Kyoto, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G05F 3/26 (2006.01);
U.S. Cl.
CPC ...
G05F 3/262 (2013.01);
Abstract

The stabilized voltage generation circuit includes: a first voltage generation circuit configured to generate a first voltage with positive temperature characteristics; and a second voltage generation circuit including a first MOSFET having a gate of a first conductivity type and a second MOSFET having a gate of a second conductivity type different from the first conductivity type and configured to generate a second voltage with negative temperature characteristics based on the difference in gate threshold voltage between the first and second MOSFETs. The output voltage is generated based on the sum voltage of the first and second voltages.


Find Patent Forward Citations

Yoshikawa, Hiroshi. (2026). Stabilized voltage generation circuit and semiconductor device (U.S. Patent No. 12656804). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12656804

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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