The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2026
Filed:
Dec. 09, 2021
Applicant:
Sgl Carbon SE, Wiesbaden, DE;
Inventors:
Charles Wijayawardhana, Meitingen, DE;
Christian Militzer, Meitingen, DE;
Jing-Jia Huang, Meitingen, DE;
Urban Forsberg, Sturefors, SE;
Henrik Pedersen, Stigtomta, SE;
Assignee:
SGL CARBON SE, Wiesbaden, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/32 (2006.01); C23C 16/44 (2006.01); C30B 28/14 (2006.01);
U.S. Cl.
CPC ...
C23C 16/325 (2013.01); C23C 16/44 (2013.01); C30B 28/14 (2013.01);
Abstract
A chemical vapor deposition (CVD) method for preparing a layer comprising refractory carbide crystals, in particular silicon carbide crystals. At least a portion of the layer is formed from a gas mixture containing a silicon source and an aromatic carbon source. The molar C/Si ratio in the gas mixture is from about 0.85 to about 1.45. Also, layers obtainable by the method, as well as their uses and applications in various industries.