The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2026
Filed:
Nov. 07, 2024
Japan Display Inc., Tokyo, JP;
Masanobu Ikeda, Tokyo, JP;
Japan Display Inc., Tokyo, JP;
Abstract
A film formation method of a gallium nitride film according to an embodiment of the present invention includes the steps of placing a substrate so as to face a target containing nitride and gallium in a vacuum chamber, heating the substrate, supplying a sputtering gas to the vacuum chamber, supplying a nitrogen radical and a hydrogen radical to the vacuum chamber, and applying a voltage to the target to generate a plasma of the sputtering gas. Gallium nitride generated by a recombination reaction between the gallium sputtered from the target and the nitrogen radical, and gallium nitride generated by a recombination reaction between a gallium cation generated from the gallium of the target and a nitrogen anion generated from the nitrogen radical are deposited on the substrate.