The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2026
Filed:
Nov. 03, 2022
Massachusetts Institute of Technology, Cambridge, MA (US);
King Fahd University of Petroleum & Minerals, Dhahran, SA;
Piran Kidambi, Somerville, MA (US);
Ahmed Ibrahim, Dhahran, SA;
Tahar Laoui, Dhahran, SA;
Jing Kong, Winchester, MA (US);
Rohit N. Karnik, Cambridge, MA (US);
Sui Zhang, Kent Vale, SG;
Massachusetts Institute of Technology, Cambridge, MA (US);
King Fahd University of Petroleum & Minerals, Dhahran, SA;
Abstract
Atomically thin layers including pores, their method of manufacture, and their use are disclosed. In some embodiments, pores may be formed in an atomically thin layer by growing the atomically thin layer on exposed portions of a substrate that includes islands comprising a material that is different than the material of the substrate. In some embodiments, pores and/or defects may be formed in an atomically thin layer by employing growth conditions that promote the formation of defects and/or pores. In certain embodiments, pores and/or defects may be etched to enlarge their size.