The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2026
Filed:
May. 12, 2023
Seiko Epson Corporation, Tokyo, JP;
Masahiro Fujii, Shiojiri, JP;
Koji Kitahara, Ina, JP;
Noboru Furuya, Chino, JP;
Motoki Takabe, Shiojiri, JP;
SEIKO EPSON CORPORATION, Tokyo, JP;
Abstract
A single crystal silicon substrate at least a part of which constitutes a flow path for liquid includes a first through-hole including an inclined side wall inclined with respect to a substrate surface of the single crystal silicon substrate, and a second through-hole constituting the flow path and including a side wall constituted by a vertical side wall more nearly vertical to the substrate surface than the inclined side wall is. The first through-hole is formed by crystal anisotropic etching. The second through-hole is formed by metal-assisted chemical etching.