The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 2026
Filed:
Jan. 17, 2022
Sony Semiconductor Solutions Corporation, Kanagawa, JP;
Takushi Shigetoshi, Kanagawa, JP;
Yoshiaki Yanagawa, Tokyo, JP;
Sony Semiconductor Solutions Corporation, Kanagawa, JP;
Abstract
In a semiconductor device provided with a through electrode, thermal stress is reduced. The semiconductor device includes a semiconductor substrate, a wiring layer, a first through hole, and a first inner through electrode. In the semiconductor device, the wiring layer is formed on a front surface of the semiconductor substrate. Furthermore, in the semiconductor device, the first through hole penetrates the semiconductor substrate from a back surface to the front surface of the semiconductor substrate, and has a side wall covered with an insulating film. Furthermore, in the semiconductor device, the first inner through electrode is formed along a part of the side wall of the first through hole.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile