The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 09, 2026

Filed:

Feb. 15, 2024
Applicant:

Ambature, Inc., Scottsdale, AZ (US);

Inventors:

Archana Tiwari, Waterloo, CA;

Mitchell Robson, Toronto, CA;

Priyanka Brojabasi, Kitchener, CA;

Assignee:

Ambature, Inc., Scottsdale, AZ (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 60/01 (2023.01); H10N 60/12 (2023.01); H10N 60/80 (2023.01);
U.S. Cl.
CPC ...
H10N 60/0912 (2023.02); H10N 60/12 (2023.02); H10N 60/805 (2023.02);
Abstract

In some implementations of the invention, a silicon dioxide (SiO) insulating layer added between islands of a top YBCO layer of a Josephson Junction isolates a contact layer from YBCO (or other conductive components) in the Josephson Junction. In some implementations of the invention, a SiOinsulating layer added between islands of a bottom YBCO layer of adjacent Josephson Junctions isolates the contact layer or other components from YBCO (or other conductive components) in the Josephson Junction. In some implementations of the invention, an etch stop layer may be deposited over the islands of the top YBCO layer prior to adding the SiOinsulating layer. This etch stop layer protects the top YBCO layer during the adding of the SiOinsulating layer and during subsequent formation of a via through the SiOto the etch stop layer.


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