The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 2026
Filed:
May. 02, 2023
Shanghai Tianma Microelectronics Co., Ltd., Shanghai, CN;
Linzhi Wang, Shanghai, CN;
Kerui XI, Shanghai, CN;
Kaidi Zhang, Shanghai, CN;
Shun Gong, Shanghai, CN;
Yukun Huang, Shanghai, CN;
Shanghai Tianma Microelectronics Co., Ltd., Shanghai, CN;
Abstract
A photosensitive transistor includes a substrate and a first semiconductor layer, a first gate, a first electrode, a second electrode and a second semiconductor layer which are located on a side of the substrate. The first semiconductor layer includes a first doped region, a second doped region and a channel region, the second semiconductor layer is in direct contact with the channel region, and an area of the second semiconductor layer is less than an area of the first semiconductor layer. The photosensitive transistor includes a main region and opening regions, and the opening regions are located at a periphery of the main region. The first electrode and the second electrode are in the same layer and insulated from each other and both surround the main region. The second semiconductor layer includes a main body portion located in the main region and auxiliary portions located in the opening regions.