Semiconductor device and manufacturing process for the same

Abstract

The present disclosure provides a semiconductor device and a manufacturing method therefor. The method includes: providing a semiconductor structure, the semiconductor structure including a semiconductor substrate, a gate disposed on the semiconductor substrate, and an interlayer dielectric layer covering the semiconductor substrate and the gate; wherein the semiconductor structure further includes a first source/drain region and a second source/drain region; defining first connecting holes and at least one first air hole on the first source/drain region and/or the second source/drain region; wherein at least one first air hole is arranged between each adjacent two first connecting holes in an X direction and/or a Y direction, the X direction being a gate length direction, the X direction being perpendicular to the Y direction; sealing each first air hole to define a first cavity in the first air hole; and filling each first connecting hole with a conductive material.