The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 2026
Filed:
Jan. 10, 2023
Renesas Electronics Corporation, Tokyo, JP;
Kouichi Konishi, Tokyo, JP;
Renesas Electronics Corporation, Tokyo, JP;
Abstract
A source diffusion layer and a base diffusion layer are formed in regions of a semiconductor substrate located between a trench gate electrode and a trench emitter electrode that are spaced apart from each other. The trench emitter electrode, the base diffusion layer, and an insulating film have a recess that recede from a first main surface toward a second main surface. A shared contact member protrudes from the first main surface toward the second main surface in a manner contacting the recess. According to above structure of a semiconductor device, it is capable of efficiently discharging carriers to an emitter during turn-off.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile