The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 2026
Filed:
May. 24, 2023
Renesas Electronics Corporation, Tokyo, JP;
Renesas Electronics Corporation, Tokyo, JP;
Abstract
A trench is formed in a semiconductor substrate. An insulating film is formed in the trench and on an upper surface of the semiconductor substrate. An ion implantation is performed to the insulating film. An etching treatment is performed to the insulating film, thereby a thickness of the insulating film is reduced. A conductive film is formed in the trench via the insulating film. In plan view, the trench extends in a Y-direction. The above-described ion implantation is performed from a direction inclined by a predetermined angle from an extending direction of a normal line with respect to the upper surface of the semiconductor substrate.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile