The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 2026
Filed:
Mar. 18, 2022
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Chih-Yen Chen, Hsinchu City, TW;
Franky Juanda Lumbantoruan, Medan Denai, ID;
Chien-Jen Sun, Hsinchu County, TW;
Yi-Wei Lien, Hsinchu City, TW;
Tuan-Wei Wang, New Taipei City, TW;
Chun-Yang Chen, New Taipei City, TW;
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Abstract
A semiconductor structure includes a nucleation layer disposed on a substrate, an epitaxial growth layer disposed above the nucleation layer, and a superlattice structure disposed between the nucleation layer and the epitaxial growth layer. The superlattice structure includes a plurality of alternately stacked superlattice units, and adjacent two superlattice units include a first superlattice unit and a second superlattice unit. The first superlattice unit includes a first superlattice layer and a second superlattice layer stacked thereon, the second superlattice unit includes a third superlattice layer and a fourth superlattice layer stacked thereon, where each of the first, second, third and fourth superlattice layers includes a plurality of pairs of two sublayers with different compositions from each other.