The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 09, 2026

Filed:

Dec. 12, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Seung Min Song, Suwon-si, KR;

Myung Il Kang, Suwon-si, KR;

Do Young Choi, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 62/10 (2025.01); H10D 30/43 (2025.01); H10D 30/67 (2025.01); H10D 64/01 (2025.01);
U.S. Cl.
CPC ...
H10D 62/115 (2025.01); H10D 30/43 (2025.01); H10D 30/6735 (2025.01); H10D 30/6757 (2025.01); H10D 62/121 (2025.01); H10D 64/017 (2025.01);
Abstract

A semiconductor device includes a substrate, an active pattern on the substrate, a plurality of lower nanosheets stacked on the active pattern, a separation structure spaced apart from the plurality of lower nanosheets in the vertical direction and disposed on the plurality of lower nanosheets, and including first to third layers sequentially stacked on each other, a plurality of upper nanosheets spaced apart from the separation structure in the vertical direction and disposed on the separation structure, and stacked on the separation structure, and a gate electrode extending in a second horizontal direction different from the first horizontal direction, and surrounding the separation structure, each of the plurality of lower nanosheets, and each of the plurality of upper nanosheets. The first and third layers include the same material, and each of the first layer and the third layer includes a material different from a material of the second layer.


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Song, Seung. (2026). Semiconductor device (U.S. Patent No. 12652833). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12652833

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