The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 2026
Filed:
Jan. 10, 2023
Renesas Electronics Corporation, Tokyo, JP;
Yuta Nabuchi, Tokyo, JP;
Akihiro Shimomura, Tokyo, JP;
Renesas Electronics Corporation, Tokyo, JP;
Abstract
An improved power MOSFET having a super junction structure is disclosed. The improved power MOSFET includes a plurality of unit cells UC, and each of the plurality of unit cells UC includes a column region PC, a column region PC, a pair of trenches TR formed between the column regions PCand PCin the X-direction and a pair of gate electrodes GE formed in the pair of trenches TR via gate insulating films (GI). The pair of trenches TR and the pair of gate-electrodes GE extend in Y-direction in a plan view. A plurality of column regions PCare formed so as to be spaced apart from one another along the Y-direction, and a width(L) of the column region PCin the Y direction is wider than a width(L) of the column region PCin the X direction.