The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 2026
Filed:
Apr. 22, 2022
Hitachi Power Semiconductor Device, Ltd., Ibaraki, JP;
MINEBEA POWER SEMICONDUCTOR DEVICE INC., Ibaraki, JP;
Abstract
A semiconductor device includes: a semiconductor substrate having a drift layer of a first conductivity type, a body region of a second conductivity type, and a JFET region of the first conductivity type in contact with the body region on both sides on the drift layer; a plurality of trenches formed in an upper surface of the semiconductor substrate and extending in a first direction; and a gate electrode formed in the trenches and on the upper surface of the semiconductor substrate with an insulating film interposed therebetween. In a unit cell, a first trench group composed of a plurality of trenches lined up in a second direction that is orthogonal to the first direction and a second trench group composed of a plurality of trenches lined up in the second direction are lined up in the first direction, and have a channel region that is shallower than the trenches.