The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12652819 B1

Date of Patent:

Jun. 09, 2026

Filed:

Feb. 08, 2021

Nitride semiconductor device

Applicant:

Guangdong Zhineng Technologies, Co. Ltd., Guangzhou, CN;

Inventors:

Zilan Li, Guangzhou, CN;

Shuxin Zhang, Guangzhou, CN;

Assignee:

GUANGDONG ZHINENG TECHNOLOGIES, CO. LTD., Guangzhou, CN;

Attorney:

Seed IP Law Group LLP

Primary Examiner:

Norman D Richards

Assistant Examiner:

Ethan Edward Cutler

Int. Cl.

CPC ...

H10D 30/47 (2025.01); H10D 30/01 (2025.01); H10D 62/85 (2025.01); H10P 14/20 (2026.01); H10P 95/00 (2026.01);

U.S. Cl.

CPC ...

H10D 30/477 (2025.01); H10D 30/015 (2025.01); H10D 30/475 (2025.01); H10D 62/8503 (2025.01); H10P 14/2905 (2026.01); H10P 14/2925 (2026.01); H10P 14/3416 (2026.01); H10P 95/11 (2026.01);

Abstract

The present invention relates to a semiconductor device, including: a first channel layer, which includes a first channel region, a first gate doped region, and a second channel region, where the second channel region is located above the first channel region, and the first gate doped region is located between the first channel region and the second channel region; a first barrier layer, where a first heterojunction having a vertical interface is formed between the first channel layer and the first barrier layer, and a vertical 2DEG or 2DHG is formed in the first heterojunction; a first electrode, which is located below the first gate doped region and in electric contact with the 2DEG or 2DHG in the first heterojunction; a second electrode, which is located above the first gate doped region and in electric contact with the 2DEG or 2DHG in the first heterojunction; and a third electrode, which is in electric contact, in the first gate doped region, with the 2DEG or 2DHG in the first heterojunction. The present invention further includes a manufacturing method for a semiconductor device.

Find Patent Forward Citations

Li, Zilan. (2026). Nitride semiconductor device (U.S. Patent No. 12652819). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12652819

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