The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 2026
Filed:
Jan. 13, 2022
Sony Group Corporation, Tokyo, JP;
Kunihiko Tasai, Tokyo, JP;
Takafumi Makino, Tokyo, JP;
SONY GROUP CORPORATION, Tokyo, JP;
Abstract
A semiconductor device capable of reducing density of threading potential without increasing a leakage current is provided. A semiconductor device including a channel layer that is included in a laminated body of a nitride semiconductor provided on a substrate, and a barrier layer that is included in the laminated body on an upper layer side with respect to the channel layer, in which the laminated body on a lower layer side with respect to the channel layer includes an n-type conversion factor that converts the nitride semiconductor into an n-type in a concentration profile having at least one or more peaks in a lamination direction of the laminated body, and a compensated area including 6×10cmor more of a compensation factor for compensating for the n-type conversion factor is provided in the laminated body on an upper layer side with respect to peaks of the concentration profile of the n-type conversion factor.