The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 2026
Filed:
Feb. 28, 2023
Samsung Electronics Co., Ltd., Suwon-si, KR;
Kyu-Hee Han, Suwon-si, KR;
Bong Kwan Baek, Suwon-si, KR;
Sang Shin Jang, Suwon-si, KR;
Koung Min Ryu, Suwon-si, KR;
Jong Min Baek, Suwon-si, KR;
Jung Hoo Shin, Suwon-si, KR;
Jun Hyuk Lim, Suwon-si, KR;
Jung Hwan Chun, Suwon-si, KR;
Samsung Electronics Co., Ltd., Suwon-Si, KR;
Abstract
A method for fabricating semiconductor device may include forming a source/drain pattern on a fin-type pattern, forming an etch stop film and an interlayer insulating film on the source/drain pattern, forming a contact hole in the interlayer insulating film, forming a sacrificial liner along a sidewall and a bottom surface of the contact hole, performing an ion implantation process while the sacrificial liner is present, removing the sacrificial liner and forming a contact liner along the sidewall of the contact hole, and forming a source/drain contact on the contact liner. The ion implantation process may include implant impurities into the source/drain pattern. The source/drain contact may be connected to the source/drain pattern.